Improvement performance CIGS thin film solar cells by changing the thickness Cd_S layer

Abstract

In this study the function of solar cells with the structure of CuIn1-xGaxSe2 is examined. CIGS solar cell consists of layers of ZnO (Layer TCO), Cd_S (buffer layer), CIGS (absorbent layer), and Layer MO (substrate), which Cd_S and CIGS layers form a PN Junction. Later using SILVACO software CIGS solar cell is simulated. Then, CIGS solar cell is simulated using SILVACO software, the thickness of the Cd_S layer is changed. Important parameters of a solar cell that will be discussed here, include open circuit voltage (VOC), short circuit current (ISC), maximum power (Pmax), filling factor (FF) and efficiency (η). After conducted simulations, it was that changing Cd_S layer thickness has impact on solar cells function.